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Analytical Equivalent Circuit of High-Irradiated Conventional Silicon Solar Cell Performance | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 5, Issue 4, 2009, Pages 11-15 | ||
| Author | ||
| H.S. Dawood | ||
| Abstract | ||
| In this study the current–voltage characteristics of a conventional silicon solar cell were studied. The experimental examination is carried out under a high concentration of light. The variations of the two reverse saturation currents are consistent with the physical significance of both the diffusion and the space-charge generation-recombination terms through their exponential variations. The simulation results clearly demonstrated that the solar cell is described with reasonable accuracy by a two-diode equivalent model that simulates the effects of the double-exponential dark current–voltage characteristics on the open-circuit voltage, fill factor, and conversion efficiency of the solar cell at a high concentration. The theoretical results are in good agreement with the experimental observations. | ||
| Keywords | ||
| Solar cells; Silicon; based devices; Equivalent circuit; High irradiation | ||
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