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Modeling of Transport Properties of Amorphous Silicon Solar Cells | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 6, Issue 1, 2010, Pages 25-32 | ||
| Authors | ||
| P.A. Riza Khan; S.M. Butta; S.A. Malik | ||
| Abstract | ||
| In this report we present the status of three projects; amorphous silicon solar cell characteristics and modeling, hole drift mobility measurements in microcrystalline and amorphous silicon, and hole-conducting polymers as player materials for amorphous and crystal silicon solar cells. The work described herein was actually done on c-Si substrates, and is preliminary to work on a-Si:H based n/i structures. Fairly good c-Si/polyaniline diodes were fabricated; the open-circuit voltage under illumination was about 0.4V. The solar conversion efficiency of as-deposited pin a-Si:H solar cells can be explained surprisingly well from hole mobility and optical absorption measurements on the intrinsic layer material. We first realized this fact about 18 months ago. | ||
| Keywords | ||
| Solar cells; Amorphous silicon; interface; Transport properties | ||
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