Hussain, M., Abdul-Jabbar, J. (2010). Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique. , 6(1), 41-46.
M.N. Hussain; J.M. Abdul-Jabbar. "Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique". , 6, 1, 2010, 41-46.
Hussain, M., Abdul-Jabbar, J. (2010). 'Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique', , 6(1), pp. 41-46.
Hussain, M., Abdul-Jabbar, J. Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique. , 2010; 6(1): 41-46.

Fabrication and Characterization of InZnO TFTs Grown on Transparent Conductive Oxide Substrate by DC Sputtering Technique

Iraqi Journal of Applied Physics
Article 1, Volume 6, Issue 1, 2010, Pages 41-46
Authors
M.N. Hussain; J.M. Abdul-Jabbar
Abstract
In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers.
Keywords
InZnO films; Thin film transistor; TCOs; DC sputtering
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