- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
The Electrical Conduction Process and Trapping Studies In SiO2 Films | ||
| Tikrit Journal of Pure Science | ||
| Article 1, Volume 17, Issue 2, 2012, Pages 164-168 | ||
| Authors | ||
| A. J. Jargis; A. S. Mohammed; E. G. Younis | ||
| Abstract | ||
| Electrical conduction in Silicon dioxide (SiO2) films of thickness range from 100-200 nm with aluminum top-contact have been studied. The (MOS) metal-Oxide-semiconductor structure is found to be strongly rectifying. In forward applied bias, the current is space-charge limited (SCL) with clear indications of progressive filling of traps. In reverse biasing condition, a Schottky-type, field-enhanced emission from the top-contact is believed to occur with = 0.44 eV. | ||
|
Statistics Article View: 124 PDF Download: 15 |
||