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Study of the Electrical Characteristics of Schottky Organic Semiconductor (n-Malachite green), Diode | ||
| Rafidain Journal of Science | ||
| Article 10, Volume 22, Issue 6, 2011, Pages 111-121 PDF (0 K) | ||
| DOI: 10.33899/rjs.2011.6520 | ||
| Authors | ||
| Zahraa H. Ahmed; Ismail K. Abbas | ||
| Abstract | ||
| In this research, Schottky diodes were fabricated using the pure organic semiconductor n- malachite green with thickness 1.43 m at room temperature. The electrodes and the ohmic contacts were Indium and aluminum respectively. These materials were deposited by vacuum evaporation process with thickness 1000Å. Current-Voltage characteristics were studied at room temperature in dark and light, and the sample showed the characteristic of schottky diode. The calculated value of ideal factor (n) is 3.3. We study the variation of conductivity with temperature in light from which the potential barrier (ΦBn) and activation energy (Ea) were calculated and their values are 1.71 and 0.22 eV at room temperature respectively. But at higher temperature their values are 1.18 and 0.368 eV respectively. Finally the series resistance (Rs) also had been calculated and its value is 2.09 kΩ. | ||
| Keywords | ||
| Organic Semiconductor; schottky diode; electrical | ||
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