STUDY THE EFFECT OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF THIN FILM CUGAS2 COMPOUND

	STUDY THE EFFECT OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF THIN FILM CUGAS2 COMPOUND
AL-TAQANI
Article 1, Volume 25, Issue 3, 2012, Pages 0-0
Abstract
In the Present study , CuGaS2 alloys have been Prepared by mixing stochiometric weight of Cu, Ga and S , then melting them under vacuum of about ( 3 × 10-2 mbar) in a sealed quartz ampoule. The thin films have been prepared by depositing the alloy on soda glass substrate , heated at different temperatures and using the thermal evaporated technique under pressure of about (3 × 10-6 mbar ). The electrical conductivity , was characterized by two activation energies in the temperature range {(-120 °C) to 25 °C}. The maximum room temperature conductivity was ( 17.6 Ω-1.cm-1). From the Hall effect measurements the type of the carriers , the carrier concentration , and that Hall mobility , at room temperature , have been deduced. The films were of n- type. The maximum value of the carrier concentration were (9.1 × 10 18 cm-3 ) for films prepared at (150 °C) and the minimum value were (1.65 × 10 18 cm-3) for films prepared at (350 °C) , while the Hall mobility had maximum value (36.45cm2/v.sec) for films prepared at (150 °C) and the minimum value was (6.08 cm2/v.sec) for films prepared at (350 °C).

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