H. Al-Batat, A., M. Alwan, A., K. Al-Kadumi, A. (2012). The effect of the etching time on the electrical properties of nano structure silicon. , 10(18), 1-4.
Ali H. Al-Batat; Alwan M. Alwan; Ahmed K. Al-Kadumi. "The effect of the etching time on the electrical properties of nano structure silicon". , 10, 18, 2012, 1-4.
H. Al-Batat, A., M. Alwan, A., K. Al-Kadumi, A. (2012). 'The effect of the etching time on the electrical properties of nano structure silicon', , 10(18), pp. 1-4.
H. Al-Batat, A., M. Alwan, A., K. Al-Kadumi, A. The effect of the etching time on the electrical properties of nano structure silicon. , 2012; 10(18): 1-4.

The effect of the etching time on the electrical properties of nano structure silicon

Iraqi Journal of Physics
Article 1, Volume 10, Issue 18, 2012, Pages 1-4
Authors
Ali H. Al-Batat; Alwan M. Alwan; Ahmed K. Al-Kadumi
Abstract
This work presents the study of the dark current density and the capacitance for porous silicon prepared by photo-electrochemical etching for n-type silicon with laser power density of 10mw/cm2 and wavelength (650nm) under different anodization time (30,40,50,60) minute. The results obtained from this study shows different chara that different characteristic of porous diffecteristics for the different porous Silicon layers.
Keywords
porous silicon; etching; nano structure
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