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Characterization of InZnO TFTs Prepared by DC Sputtering Technique | ||
| Iraqi Journal of Applied Physics | ||
| Article 1, Volume 9, Issue 2, 2013, Pages 41-46 | ||
| Authors | ||
| Moath N.H; Jasim M.A | ||
| Abstract | ||
| In this work, depletion-mode transistors were made of InZnO thin films prepared and grown on transparent conductive substrates by DC sputtering technique. The SiO2-In2O3-ZnO system and N2 plasma incorporated InZnO film were grown to get a better controllability of the carrier concentration during the film growth. Hydrogen plasma and oxygen plasma effects on the TCO films and the TFTs were investigated. Devices were simulated in a device model to extract the parasitic parameters. The depletion-mode TFTs have been fabricated successfully on glass by using InZnO films as the channel layers. | ||
| Keywords | ||
| InZnO films; Thin film transistor; TCOs; DC sputtering | ||
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