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Atom (Ion)- Surface Scattering Process: Configurations Interaction Method | ||
| Journal of Basrah Researches (Sciences) | ||
| Article 1, Volume 39, Issue 1, 2013, Pages 89-100 PDF (0 K) | ||
| Author | ||
| Shakir.I.Easa and Falah.H.Hanaon | ||
| Abstract | ||
| The shape effect of the surface density of state on the charge transfer in atom(ion)-surface scattering process is investigated in detail by formulating the configurations interaction (CI) method. The method is applied to the formation of exited silicon ion Si+* from the scattering of Si2+ from Si surface as we used as well the method to clarify the nonlinear behaviors of the H+ survival probability as a function of the scattering angle during its specular scattering from graphite (HOPG) surface. | ||
| Keywords | ||
| Surface Physics; Atom; surface scattering; Charge transfere | ||
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