- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Photoluminescence from Etched Silicon Surface by High Power Laser | ||
| Basic Education College Magazine For Educational and Humanities Sciences | ||
| Article 1, Volume 0, Issue 1, 2018, Pages 454-460 | ||
| Author | ||
| Uday Arkan Abbas | ||
| Abstract | ||
| Porous silicon layers (P-Si) has been prepared in this work via Laser-induced etching process (LIE) of n-type silicon wafer of 3 Ω.cm resistivity in hydrofluoric (HF) acid of 24.5 % concentration at different etching times (5 – 25min.). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. The morphological and photoluminescence characteristics of these layers such as porosity, surface morphology and nanocrystallite size have been investigated using scanning electron microscope (SEM) and photoluminescence (PL) measurements and the gravimetric method. | ||
| Keywords | ||
| Photoluminescence from Etched Silicon Surface by High Power Laser | ||
|
Statistics Article View: 158 PDF Download: 5 |
||