I. Khaleel, K., J. Mohamed, S., F. Abdulaziz, A. (2012). Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement. , 0(0), 386-393.
Khalaf I. Khaleel; Subry J. Mohamed; Abdulsamee F. Abdulaziz. "Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement". , 0, 0, 2012, 386-393.
I. Khaleel, K., J. Mohamed, S., F. Abdulaziz, A. (2012). 'Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement', , 0(0), pp. 386-393.
I. Khaleel, K., J. Mohamed, S., F. Abdulaziz, A. Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement. , 2012; 0(0): 386-393.

Investigation of the Ag-BaF2-GaSb schottky diode current versus voltage, capacitance with voltage and photoelectric measurement

Basic Education College Magazine For Educational and Humanities Sciences
Article 1, Volume 0, Issue 0, 2018, Pages 386-393
Authors
Khalaf I. Khaleel; Subry J. Mohamed; Abdulsamee F. Abdulaziz
Abstract
Schottky barrier-type devices are rectifying metal-semiconductor (M-S) structure. This device is used in microelectronics, in solar cell applications, and in chemical sensing [1]. In the Schottky model the amount of band bending is equal to the difference between the work functions, m and s of the metal and semiconductor respectively.
Keywords
Investigation of the Ag; BaF; GaSb schottky diode current versus voltage; capacitance with voltage and photoelectric measurement
Statistics
Article View: 127
PDF Download: 40


Journal Management System. Powered by iJournalPro.com