Al-Ansari, R., Al-Lamy, H., Al-Haidery, J. (2013). Dependence of Structural and I-V Characteristic on Annealing Temperature of a-As/c-Si Heterojunction. , 9(0), 53-57.
Ramiz Al-Ansari; Hussien Al-Lamy; Jenan Al-Haidery. "Dependence of Structural and I-V Characteristic on Annealing Temperature of a-As/c-Si Heterojunction". , 9, 0, 2013, 53-57.
Al-Ansari, R., Al-Lamy, H., Al-Haidery, J. (2013). 'Dependence of Structural and I-V Characteristic on Annealing Temperature of a-As/c-Si Heterojunction', , 9(0), pp. 53-57.
Al-Ansari, R., Al-Lamy, H., Al-Haidery, J. Dependence of Structural and I-V Characteristic on Annealing Temperature of a-As/c-Si Heterojunction. , 2013; 9(0): 53-57.

Dependence of Structural and I-V Characteristic on Annealing Temperature of a-As/c-Si Heterojunction

journal of kerbala university
Article 1, Volume 9, Issue 0, 2013, Pages 53-57    PDF (0 K)
Authors
Ramiz Al-Ansari; Hussien Al-Lamy; Jenan Al-Haidery
Abstract
In this work the effect of annealing temperature on the structure of a-As and electrical properties of a-As/c-Si heterojunction have been studied. The heterojunction fabricated by deposited of a-As film on c-Si using thermal evaporation technique. Electrical properties of a-As/c-Si heterojunction includes I-V characteristic in dark at different annealing temperature and C-V characteristic are considered in the present work.
C-V characteristic show that the fabricated diode was abrupt type , built in potential determined by extrapolation from 1/C2-V curve. The built in potential (vbi) for the a-As/c-Si system was found to be increase from 0.35 to 0.8 V with increasing annealing temperature.
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