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Design and simulation of Differential Transimpedance Amplifier (TIA) Based on 0.18 µm CMOS Technology-eng | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 17, Volume 21, Issue 4, 2013, Pages 121-131 PDF (0 K) | ||
| DOI: 10.33899/rengj.2013.77383 | ||
| Authors | ||
| Dr. Luqman Safar; Muna Samir Zaki | ||
| Abstract | ||
| Abstract The transimpedance amplifier is realized in a 0.18μm CMOS technology. The TIA uses a shunt-shunt feedback topology, differential TIA because it reaches a higher bandwidth than a conventional one. The TIA also has a variable gain to increase the bandwidth of theamplifier . The TIA has a maximum gain of 73 dBΩ, bandwidth 3.1GHZ, bit rate 5Gb/s and input-referred current noise of 5 pA/√Hz. Eyejitter at bit rate 5Gb/s equal to 5ps (peak to peak). Keywords:transimpedance amplifier (TIA) , Berkeley Short Channel Igfet model (BSIM model) , Advanced design system (ADS) . | ||
| Keywords | ||
| KEYWORDS; Berkeley Short Channel Igfet model; Advanced design system | ||
|
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