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Energy Gap and Electrical Conductivity of Doped Amorphous Silicon (a- Si)with Sb | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 21, Issue 1, 2010, Pages 88-96 | ||
| Author | ||
| Talib S. Mamadi | ||
| Abstract | ||
| Energy gap and electric conductivity``of Sb doped samples was invesstegate .Thin filmss of amorphous silicon (a-Si) were prepared and doping by thermal evaporation under high vacuum condition (10-6) torr. The influence of doping with (Sb) of various percentages within the range (0-3.5)% on the electrical conductivity (RT), carriers concentration and optical energy gap (Eg) were studied. The temperature dependence conductivity for pure and various percentage doping with (Sb) of (a-Si) recorded within the range (303-503)K consist of two conduction regions within the temperature range (303-393)K and (393-503)K. From the absorbance spectrum and electrical measurements. It is found that (Eg) decreases from 1.22eV to 0.92eV when the percentages doping with Sb increases from (0 -3)% but it increases to 0 .96eV at 3.5% Sb while the electrical conductivity (RT) and carriers concentration(n) increases from 0.898×10-4 (Ω.cm)-1 to 2.95×10-3 (Ω.cm)- 1 but it decreases to 1.99×10-3 (Ω.cm)- 1 at 3.5% Sb , and (n) increases from 0.602×1021 m-3 to 16.53×10-3 m-3 but it decreases to 13.52×10-21 m-3 with 3.5%Sb respectively. | ||
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