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Electrical, Thermal, and Optical Properties Studyfor CdSe Thin Film | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 20, Issue 1, 2009, Pages 55-61 | ||
| Author | ||
| Usama A.A. Dakhel | ||
| Abstract | ||
| CdSe compound was prepared in evacuated quartz tube. By mixing Cd and Se elements with molartic ratio and the mixture heated inside the quartz tube then the product grinded carefully, and examined by X-ray and the product found to be polycrystalline CdSe with hexagonal lattice, then CdSe thin film was prepared by thermal evaporation technique. The film was deposited on a glass substrate with deposition rate(2Ǻ/s), substrate temperature (Ts) 200oC and the thickness was 3600Ǻ. The electrical and thermal measurements shows that the film appear to be n-type semiconductor while optical measurements shows that the film have one energy gap and the electronic transitions are direct. | ||
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