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Photoluminescence of Lattice Matched of Alinas Layers | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 20, Issue 5, 2009, Pages 105-115 | ||
| Author | ||
| Ibrahim R. Agool | ||
| Abstract | ||
| The photoluminescence spectroscopy of Molecular Beam Epitaxy (MBE) grown AlInAs layers has been used for the detection of optical transition from an excited electronic state to a lower state usually, the ground state. This technique show that it is a very sensitive tool for investigating both the intrinsic electronic transitions and at impurities and defect at low temperatures. The photoluminescence spectrum consists of a sharp line that is assumed to be a band to band transitions (which is a sample dependent) and, a broad emission band could be due to substrate InP and / or donor-acceptor transitions. These results suggest that the peak is due to two emission bands, one is dominated at low temperature. The two bands have different power dependence and therefore this could account for different activation energies. In addition the lattice matched of AlInAs, layers has a band gap of 1.55eV. | ||
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