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The optical properties of a- (GeS2)100-xGax thin films | ||
| Iraqi Journal of Physics | ||
| Article 1, Volume 11, Issue 21, 2013, Pages 28-36 | ||
| Authors | ||
| ; Bushra A.Hasan; | ||
| Abstract | ||
| Thin films whose compositions can be expressed by (GeS2)100-xGax (x=0, 6,12,18) formula were obtained by thermal evaporation technique of bulk material at a base pressure of ~10-5 torr. Optical transmission spectra of the films were taken in the range of 300-1100 nm then the optical band gap, tail width of localized states, refractive index, extinction coefficient were calculated. The optical constants were found to increase at low concentration of Ga (0 to12%) while they decreases with further addition of Ga. The optical band gap was found to change in opposite manner to that of optical constants. The variation in the optical parameters are explained in terms of average bond energy of the system. | ||
| Keywords | ||
| Chalcogenide glasses; absorption coefficient; Optical band gap; average bond energy | ||
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