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Theoretical Calculation of Rate Constant of Charge Transport Processes in Au Metal/Semiconductor Interface System | ||
| Journal of Univesity of Thi-Qar | ||
| Article 1, Volume 8, Issue 2, 2013, Pages 195-205 | ||
| Authors | ||
| Hadi J. Al-Agealy; Hussain K. Mujbil | ||
| Abstract | ||
| The rates constant of the charge transfer in the interface between gold(Au) metal and ZnO, ZnS, and ZnSe semiconductor systems have been calculated with the reorientation free energy a according to a theoretical model which has been derived according quantum theory in terms of physical parameters. We present a quantum model and a Hush theory for reorientation energy to study of electron transfer across gold. The rate of charge transfer increase with increase the reorientation energy. The rate constant of electron transfer Ket depend on the barrier height of Au/ZnO, Au/ZnS, and Au/ZnSe system, this barrier formed during contact and depends on the work function and affinity of semiconductors. Results of the rate constant of electron transfer Ket depends on reorientation energy λ, work function of metal Φm, affinity of semiconductors χ , crystal structure of semiconductors properties of metal and the coupling matrix element between metal and semiconductors. | ||
| Keywords | ||
| Charge transport processes; ZnO; ZnS; and Au | ||
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