RAMIZY, A., TH. HASSAN, K., M.IBRAHIM, I., S. MATOK, A. (2013). FABRICAT & STUDY CU0.5IN0.5S2 THIN FILMS COMPOSITE PREPARED BYPYLORYSIS SPRAY METHOD.. , 7(1), 204-209. doi: 10.37652/juaps.2013.83046
ASMIET RAMIZY; KHALIL TH. HASSAN; ISSAM M.IBRAHIM; ADEAL S. MATOK. "FABRICAT & STUDY CU0.5IN0.5S2 THIN FILMS COMPOSITE PREPARED BYPYLORYSIS SPRAY METHOD.". , 7, 1, 2013, 204-209. doi: 10.37652/juaps.2013.83046
RAMIZY, A., TH. HASSAN, K., M.IBRAHIM, I., S. MATOK, A. (2013). 'FABRICAT & STUDY CU0.5IN0.5S2 THIN FILMS COMPOSITE PREPARED BYPYLORYSIS SPRAY METHOD.', , 7(1), pp. 204-209. doi: 10.37652/juaps.2013.83046
RAMIZY, A., TH. HASSAN, K., M.IBRAHIM, I., S. MATOK, A. FABRICAT & STUDY CU0.5IN0.5S2 THIN FILMS COMPOSITE PREPARED BYPYLORYSIS SPRAY METHOD.. , 2013; 7(1): 204-209. doi: 10.37652/juaps.2013.83046

FABRICAT & STUDY CU0.5IN0.5S2 THIN FILMS COMPOSITE PREPARED BYPYLORYSIS SPRAY METHOD.

Journal of University of Anbar for Pure Science
Article 42, Volume 7, Issue 1, 2013, Pages 204-209    PDF (549.85 K)
Document Type: Research Paper
DOI: 10.37652/juaps.2013.83046
Authors
ASMIET RAMIZY* 1; KHALIL TH. HASSAN1; ISSAM M.IBRAHIM2; ADEAL S. MATOK1
1University of Anbar - College of Science
2University of baghdad - College of Science
Abstract
Thin film of Cu0.5In0.5S2 has been prepared by spray pyrolysis on different substrate of silicon and glass slides (25mm ×25mm) substrate at temperature (Ts) of 300 ±10oC . The thickness of thin films is 500 ±20nm. The morphology of the prepared film showed asmooth formationwith small grain sizes overall the entire surface.This indicates that the formation of crystalline compounds. The optical characteristics of thin film have been investigated by UV-VIS spectrophotometer in the wavelength range (300 -1000nm ) . The film has a direct allows electronic transition with the optical energy gap ( Eg ) of 2.9 eV . The broadening of the band gap energy occurs with the decrease in the crystallite size. The papered film revealed a good light trapping of wide wavelength spectrum. This means the film is promising in optoelectronic applications. The electrical properties were investigated using Hall measurements techniques; the result provides an evidence of p-type .
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