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STUDY OF SOME SURFACE DEFECTS FOR SINGLE CRYSTAL SILICON WAFER | ||
| Journal of University of Anbar for Pure Science | ||
| Article 44, Volume 7, Issue 1, 2013, Pages 218-224 PDF (760.98 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.37652/juaps.2013.83053 | ||
| Authors | ||
| SARYA D. MOHAMED1; HATEM A. TAHA2; ARREJ R.SAEED1 | ||
| 1University of Technology - Department of Applied Sciences | ||
| 2University of Baghdad - College of Education - Ibn Al-Haytham | ||
| Abstract | ||
| The single crystal of semiconductor no longer be perfect, but contains some defect in the structure and surface of twining, lineage structure, grain boundaries. Search included the adoption of technical betting that chemical and microscopic tests to determine defects on the surface of silicon wafer for the planes (111), (110) after the transactions mechanical and fluids through showing my favorites.Use this search chromium oxide solution in acid to show lineage structure on single silicon wafer with the planes (111), (110) showed microscopic examinations on the bodies of the geometric form of a matrix triangles in a row, a row matrix of rectangles in one direction and running. Shows the lineage structure by the movement of dislocations leading to the displacement of the crystal lattice toward Berger vector. Has been the adoption of CP-4 solution in a show on the twin single silicon chip with the levels (111), (110). Where tests showed microscopic differences in the reflectivity of light to the surface because of the difference in per vector for the same crystal plane, and classify the types of forms to surface twinning and contact twinning so as to form a two-way symmetrical in the same plane. While the CP-4 solution genitive copper ions show polycrystalline silicon crystals on the surface, where tests show the implications of different optical microscopy and multiple segments of the crystal. | ||
| References | ||
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[1] W. R. Runyan, T. J. Shaffner(1998). “Semiconductor Measurements and Instrumentation”. 454 pages, McGraw-Hill, New York.
[2] W. R. Runyan (1965). “Silicon semiconductor technology” 277 pages, McGraw-Hill, - Technology & Engineering ,New York.
[3] D. K. Schroder (1998)." Semiconductor Material and Device Characterization” , p. 634, John Wiley &Sons, New York.
[4] K. Dornich, T. Hahn, and J.R. Niklas (2005). “Non destructive electrical defect characterization and topography of silicon wafers and epitaxial layers” Mater. Res. Soc. Symp. Proc.. Vol. .864 E11.2.1
[5] Robyn L. Woo, Rui Xiao, Yoji Kobayashi, Li Gao, Niti Goel (2008) “Effect of Twinning on the Photoluminescence and Photo electrochemical Properties of Indium Phosphate Nanowires Grown on Silicon (111)” Nano Lett.. VOL. 8.. NO .12, 4664-4669.
[6]R. Edwin Oosterbroek, J. W. (Erwin) Berenschot, Henri V. Jansen(2000)
“Etching Methodologies in <111 >Oriented Silicon Wafers” JOURNAL OF MICROELECTROMECHANICAL SYSTEMS..VOL. 9.. NO. 3, SEPTEMBER.
[7] Mingu KANG, Byeong-Eog JUN, Young H. KIM(2011) “Effect of orientation and size of silicon single crystal to Electro-Ultrasonic Spectroscopy” Korea Science Academy of KAIST, Korea.. International Workshop of NDT Experts
[8] V. Voronkova,z and R. Falsterb, (2002) Journal of The Electrochemical Society VOL.149 ..NO.3, G167-G174.
[9]Hirofumi Miyahara (2005) “Effect of Twin Growth on Unidirectional Solidification Control of Multicrystal Silicon for Solar Cells"Materials Transactions.. Vol. 46.. No. 5 pp. 935 to 943. | ||
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