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FABRICATION AND STUDY CHARACTERISTICS OF CDO/SI HETEROJUNCTIONDETECTOR BY CBD TECHNIQUE | ||
| Journal of University of Anbar for Pure Science | ||
| Article 45, Volume 7, Issue 1, 2013, Pages 225-232 PDF (465.46 K) | ||
| Document Type: Research Paper | ||
| DOI: 10.37652/juaps.2013.83056 | ||
| Authors | ||
| ABDUL-MAJEED E. AL-SAMAR1; RIAD A. ASMIAL2; SABRE J.MOHMED1; HANI H. AHMED3 | ||
| 1Tikrit University - College of Education | ||
| 2University of Technology - Department of Applied Sciences | ||
| 3Tikrit University - College of Science | ||
| Abstract | ||
| In this work CdO/Si heterojunction detector were fabricated by depositing CdO thin film on p-type single crystal silicon wafers by chemical bath deposition technique(CBD) . The effect of cadmium ion concentration on the structural properties of deposited film and optoelectronic characteristics of fabricated detector has been considered in this work . From the x-ray diffraction result, it is shown that the CdO film has a single crystalline in cubic structure with preferential orientation along the (311) crystal plane. The -voltage characteristics under dark result, it is shown that ideality factor of heterojunction has higher value(n˃1).From current-voltage characteristics under illuminations result, it is shown that photocurrent increase with increasing cadmium ion concentration in solution. The capacitance–voltage characteristic shows a typical abrupt heterojunction. The optoelectronic characteristics shows the CdO/Si detector has good spectral responsivity in visible and NIR with higher peak responsivity at 900 nm were found 0.38 A/W. | ||
| Keywords | ||
| CdO | ||
| References | ||
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