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Effect of Sputtering pressure and partial pressure on Structural Properties of TiO2thin Films | ||
| Journal of Kufa - physics | ||
| Article 1, Volume 5, Issue 2, 2013, Pages 15-20 | ||
| Authors | ||
| Mahdya A.Yeser; Raaed S.Atea | ||
| Abstract | ||
| Effect of sputtering pressure and partial pressure on structural properties of TiO2 films prepared using DC-sputtering to glass substrate was investigated. sputtering pressures are changed (1.8,2.8,3.8,4.3 pa) at constant O2 /Ar Ratio(5%). Measurements reveal that the TiO2 films at the sputtering pressure 1.8 pa is amorphous , while at increasing pressure to 2.8 pa becomes crystalline with Rutile phase (110) and when we increase the pressure to 4.3 pa get crystalline structure with anatas phase ( 101) .Grain size is calculated per crystalline structure of the anatas and rutile (15.7) nm and(14.2) nm respectively. For constant sputtering pressure (2.8pa) and changedO2/Ar Ratio(10% ,15% ,20% ,25% ,30% , 35%),TiO2 thin films are a amorphous, except percentage (25%) is crystalline with anatas phase (101) and with grain size (15.7 nm). | ||
| Keywords | ||
| Structural properties; TiO; Sputtering | ||
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