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Characteristics of Nanostructure Porous Silicon Prepared by Anodization Technique | ||
| Engineering and Technology Journal | ||
| Article 7, Volume 31, 3B, 2013, Pages 339-347 PDF (609.62 K) | ||
| DOI: 10.30684/etj.31.3B.7 | ||
| Authors | ||
| Ayoub H. Jaafar; Uday M. Nayef | ||
| Abstract | ||
| Porous silicon (PS) layers are prepared by anodization for different current densities. The samples are then characterized the nanocrystalline porous silicon layer by X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Fourier Transform Infrared (FTIR), Reflectivity and Raman. PS layers were formed on a p-type Si wafer. anodized electrically with a 10 and 40 mA/cm2 current density for fixed 20 min etching times. We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and AFM confirms the nanometric size and therefore optical properties about nanocrystalline silicon yields a Raman spectrum showing a broadened peak shifted below 520 cm-1. | ||
| Keywords | ||
| porous silicon; ray diffraction; Morphological properties; Fourier Transform Infrared; Reflectivity; Raman | ||
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