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Characteristic of Cross Gain Modulation in Quantum-Dot Semiconductor Optical Amplifier by Using Three-Level Rate Equations Model | ||
| Journal of College of Education | ||
| Article 1, Volume 0, Issue 3, 2017, Pages 101-114 | ||
| Author | ||
| Hussein H. Warid | ||
| Abstract | ||
| The cross gain modulation response (XGM) in undoped quantum dots semiconductor optical amplifier (QDs-SOA) is investigated using three-level rate equations model (3LREM). Simple analytical expression is derived which directly connects the (XGM) response to the change of electron occupation probabilities in wetting layer (WL), excited state (ES) and ground state (GS). For high values of the pump level and injection current, the main XGM mechanism is the spectral-hole burning (SHB). Depending on the pump level, the 3-dB bandwidth can be tuned from 18 GHz to 39 GHz when the pump level increases from 0.5 saturation power to 0.9 saturation power. For the bias current, the 3-dB bandwidth can be tuned from 21 GHz to 35 GHz when the current increasing from 50 mA to 200 mA. | ||
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