Omran Abdulkareem, A., Muhammad, A., Muhammad Ali, S. (2013). optical properties of the hetrojenction (n-Ge / p-GaAs. , 0(1), 379-392.
Ahmed Omran Abdulkareem; Abdulrazak Muhammad; Suad Muhammad Ali. "optical properties of the hetrojenction (n-Ge / p-GaAs". , 0, 1, 2013, 379-392.
Omran Abdulkareem, A., Muhammad, A., Muhammad Ali, S. (2013). 'optical properties of the hetrojenction (n-Ge / p-GaAs', , 0(1), pp. 379-392.
Omran Abdulkareem, A., Muhammad, A., Muhammad Ali, S. optical properties of the hetrojenction (n-Ge / p-GaAs. , 2013; 0(1): 379-392.

optical properties of the hetrojenction (n-Ge / p-GaAs

Journal of College of Education
Article 1, Volume 0, Issue 1, 2017, Pages 379-392
Authors
Ahmed Omran Abdulkareem; Abdulrazak Muhammad; Suad Muhammad Ali
Abstract
In this paper, heterojunction will be prepared using Galuim Arsanide (GaAs) slices as a substrate Germanium will be evaporated to be used as thin film on the substrate. Hetero junction samples for (Ge / P-GaAs) were preparing using (Ge-Au) with (0.12- 0.88) respectively. All these samples were annealed at (673 K) for 30 minutes. Spectral response, Detectivity efficiency, quantum efficiency, specific detectivity of equivalent noise power were evaluated through the measurement of optical current characteristics for this hetero junction, to study its usability in IR and near IR detect system.
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