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Preparation of Silicon Nano-Structure by Laser-Induced Etching Process | ||
| Journal of Kufa - physics | ||
| Article 1, Volume 1, Issue 1, 2009, Pages 54-60 | ||
| Author | ||
| Oday A. Abbass | ||
| Abstract | ||
| Silicon nano-structure has been prepared in this work via Laser-induced etching process (LIE) on n-type silicon wafer (3 Ω.cm resistivity) in hydrofluoric acid (HF) (24.5 % concentration) at different etching times (5 – 25 min.). The irradiation has been achieved using laser beam of 2W power and 810 nm wavelength. The morphological and photoluminescence characteristics of these material such as porosity, surface morphology and nanocrystallite size have been investigated using scanning electron microscope (SEM), photoluminescence (PL) measurements, and the gravimetric method. | ||
| Keywords | ||
| Silicon Nano; structure; Laser; Induced Etching Process | ||
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