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Effect of Different Etching Parameters on Resistivity of Silicon Nano-Material | ||
| Journal of Kufa - physics | ||
| Article 1, Volume 1, Issue 2, 2009, Pages 100-107 | ||
| Authors | ||
| Oday A. Abbas; Kahtan A. Noman; Abbas H. Rahim | ||
| Abstract | ||
| Silicon nano-material have been prepared in this work via electrochemical (EC) and photoelectrochemical (PEC) etching processes of n and p-type silicon wafers in hydrofluoric (HF) acid of 24.5 % concentration. All conditions preparation such as substrate resistivity, etching time, current density and illumination have been changed to study the effect of these parameters on resistivity of these porous silicon layers. | ||
| Keywords | ||
| Effect Different Etching; Parameters on Resistivity; Silicon Nano; material | ||
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