- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Resonance Tunneling Lifetime in Amorphous Si / Si1-xGex Quantum Wells Superlattice | ||
| Al-Mustansiriyah Journal of Science | ||
| Article 1, Volume 22, Issue 5, 2011, Pages 201-210 | ||
| Author | ||
| Rusul Adnan Al-Wardy | ||
| Abstract | ||
| The purpose of this work is to report a theoretical study forresonant tunneling lifetime (τ) of electrons tunneling through semiconductor superlattice system. The system that we have considered is a-Si/Si1-xGexheterojunctionsuperlattice within the energy range of ε < the potential barrier height (Vo). From such system, we determined the (τ) dependency on mole fraction (x), the number of barriers, N, and the dimensions of barriers and wells width. Our results indicate that there is a possibility to use such device in laser diodes applications by near future. | ||
|
Statistics Article View: 206 PDF Download: 90 |
||