- All Journals
- Al-Qadisiyah University
- Basrah University
- Kirkuk University
- Mosul University
- The Iraqi Borad for Medical Specialization
- University of Anbar
- University of Technology
- Al Mustafa University
- Al-Zahraa University for Women
- Alnoor University
- Kunooz University
- Misan University
- Ninevah University
- Tikrit University
- University of Al-Hamdaniya
- University of Kerbala
Preparation and Study of SnO2 MOM Structure by The Thermal Vacuum Evaporation Deposition | ||
| Al-Rafidain Engineering Journal (AREJ) | ||
| Article 16, Volume 22, Issue 1, 2014, Pages 99-111 PDF (0 K) | ||
| DOI: 10.33899/rengj.2014.86990 | ||
| Authors | ||
| Omar Ghanim Ghazal; Dr. Luqman Sufer Ali | ||
| Abstract | ||
| Resistive switching random access memory is one of the novel nonvolatile memory technologies that, has a promising future for replacing the conventional FLASH memory. In this work a detailed study made about the types of operations and understanding the mechanisms of the resistance changing in the device. SnO2 thin films are deposited by using Thermal Vacuum Evaporation deposition method at room temperature on Al/glass substrate to produce Al/SnO2/Al/glass device structure. Optical properties are taken to measure the optical band gap of SnO2. Resistive switching is observed by taking current voltage readings at room temperature. RRAM cell showed unipolar resistive switching behavior with no overlapping between reset and set voltage (1.5V, 2.5V respectively) ,also between high and low resistance states (7.7KΩ,106Ω). Good retention and endurance are obtained and the ratio between HRS to LRS has been found to be at least (41) within 21 cycles | ||
| Keywords | ||
| KEYWORDS; Resistive Switching; nonvolatile memory; Sno | ||
|
Statistics Article View: 438 PDF Download: 369 |
||