Structural and Electrical Properties of  InSb Films   Prepared By Flash Evaporation Technique

	Structural and Electrical Properties of InSb Films Prepared By Flash Evaporation Technique
Ibn Al-Haitham Journal For Pure And Applied Science
Article 1, Volume 26, Issue 3, 2013, Pages 77-85
Abstract
In recent years, searches have been made on various semiconductors to supplement silicon and germanium for use in electric applications. Among many elements appear particularly useful, interest has been focused on compounds formed from group III and V of the periodic Table, such as GaAs, GaP, InSb, etc. [1]. These compounds, such as, InSb has highest electron mobility and smallest band gap with large lattice constant[2], due to these characteristic, it is well established material system for mid- thermal imaging middle wavelength infrared (MWIR) applications, including IR thermal imaging obtained from InSb focal plan array (FPA) on Si, in the (3-5)µm wavelength ranges, military infrared systems, environmental gas monitoring [3], photocell[1], fast automatic recording instruments, infrared photonic detectors ,Hall generator, transport device ,such as magneto resistors ,magnetic sensor[4],glavanomagnetic device[5],high speed electronic devices operating at low temperature, free space communications[6], antenna-coupled infrared detectors, photo-electronic and magnet-electric conversion devices[7,8]. Thin films of InSb may be deposited by different methods like r.f. sputtering, molecular beam epitaxy (MBE), chemical vapor deposition (CVD), flash evaporation and vacuum evaporation[9].InSb films are very attractive for using in application as Hall Effect, magnetoresistance devices, and for tuning in infrared laser and detectors [10]. This paper investigates the effect of substrate temperatures on the structural and electrical properties of prepared InSb films by flash evaporation technique from its prepared alloy.

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