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Theoretical Studies Of Electron Transport Processes In Metal/Semiconductor Interfaces | ||
| journal of kerbala university | ||
| Article 1, Volume 7, Issue 4, 2011, Pages 105-112 PDF (0 K) | ||
| Authors | ||
| Hadi jabbar mujbil Al-Aagealy; ; Mohsin A | ||
| Abstract | ||
| A quantum mechanical description of the dynamics of non-adiabatic electron transfer in metal/semiconductor interfaces can be achieved using simplified models of the system. For this system we can suppose two localized quantum vector states system with a conduction electron state vector l├ φ_D^et 〉 interacting with an acceptor state vector l├ φ_A^et 〉 of electron in band of metal with the interacting described by the coupling matrix element. Expression of rate constant 0f electron transfer for metal/semiconductor system derived upon Green function and quantum model and perturbation theory for transition between l├ φ_D^et 〉 and Iφ_A^et state when the coupling matrix element coefficient smaller than k_B T . The rate of electron transfer evaluated with orientation free energy using aMATLAP program. The calculate of the electron transfer rate constant are compared with experimental results as well as with theoretical results obtained for our mode. | ||
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